Search results for " radiation-induced attenuation"
showing 5 items of 5 documents
UV-Photoinduced Defects In Ge-Doped Optical Fibers
2005
We investigated the effect of continuous-wave (cw) UV laser radiation on single-mode Ge-doped H2- loaded optical fibers. An innovative technique was developed to measure the optical absorption (OA) induced in the samples by irradiation, and to study its dependence from laser fluence. The combined use of the electron spin resonance (ESR) technique allowed the structural identification of several radiation-induced point defects, among which the Ge(1) (GeO4 -) is found to be responsible of induced OA in the investigated spectral region.
Bleaching of optical activity induced by UV Laser exposure in natural silica
2004
We report experimental data on two types of natural silica, differing for their OH content, irradiated with UV photons (4.66 eV) from a pulsed Nd:YAG laser. Irradiation induces a reduction of the absorption band at 5.12eV and of the associated emissions at 3.14eV and 4.28eV, ascribed to twofold coordinated Ge (=Ge'') centers pre-existing in our samples. The bleaching is mainly due to the post-irradiation conversion of =Ge'' into the paramagnetic H(II) center via trapping of a H atom. Comparison with literature data points out the peculiarities of silica with a low Ge concentration as regards UV induced transformations.
Photoluminescence in gamma-irradiated alpha-quartz investigated by synchrotron radiation
2004
Abstract We report an experimental investigation of the photoluminescence, under excitation by synchrotron radiation within the absorption band at 7.6 eV , induced in γ-irradiated α-quartz. Two emissions centered at 4.9 and 2.7 eV are observed at low temperature: the former decreases above 40 K , whereas the second band exhibits an initial slight increase and its quenching is effective above 100 K . Furthermore, the decay kinetics of both emissions occur in a time scale of nanoseconds: at T=17.5 K we measured a lifetime τ∼1.0 ns for the photoluminescence at 4.9 eV and τ∼3.6 ns for that at 2.7 eV . These results give new insight on the optical properties associated with defects peculiar of c…
Spectral heterogeneity of oxygen-deficient centers in Ge-doped silica
2004
Abstract We report an experimental investigation of the emission spectra of a 1000 mol ppm sol–gel Ge-doped silica by fine tuning the excitation energy in the ultraviolet (UV) range, around 5 eV , and in the vacuum-UV range, around 7.3 eV , at room temperature and at 10 K . The sample is characterized by a blue (centered at ∼3.2 eV ) and an UV (centered at ∼4.3 eV ) bands. We have found that the ratio between the area of the blue and the UV bands depends on the temperature and on the excitation energy in both the vacuum-UV and the UV range. At both temperatures the spectral features of the blue and the UV bands are weakly affected when the excitation is varied in the vacuum-UV. At variance,…
Properties of Gd-Doped Sol-Gel Silica Glass Radioluminescence under Electron Beams
2022
International audience; The radiation-induced emission (RIE) of Gd3+-doped sol–gel silica glass has been shown to have suitable properties for use in the dosimetry of beams of ionizing radiation in applications such as radiotherapy. Linear electron accelerators are commonly used as clinical radiotherapy beams, and in this paper, the RIE properties were investigated under electron irradiation. A monochromator setup was used to investigate the light properties in selected narrow wavelength regions, and a spectrometer setup was used to measure the optical emission spectra in various test configurations. The RIE output as a function of depth in acrylic was measured and compared with a reference…